IRF3205 MOSFET

The IRF3205 MOSFET from International Rectifier is a high-performance 100V single N-channel HEXFET power MOSFET designed in the TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, offering enhanced efficiency and reliability. With a dynamic dv/dt rating, it provides rugged, fast switching performance and is fully avalanche rated, making it suitable for a wide range of demanding applications. The gate to source voltage is ±20V, and it has an on-resistance (Rds(on)) of 8mohm at a Vgs of 10V. With a power dissipation (Pd) of 130W at 25°C and a continuous drain current (Id) of 110A at Vgs 10V and 25°C, it offers excellent performance under high-power conditions. The operating junction temperature range is from -55°C to 175°C, ensuring its reliability in extreme environments. This MOSFET is ideal for power management, industrial applications, portable devices, and consumer electronics.