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AO 3400 SEMICONDUCTOR


  • Voltage & Current: 30V drain-to-source, 5.8A continuous current.
  • Power Dissipation: 1.4W at room temperature (Ta).
  • Package: Compact SOT-23-3 surface-mount design.
  • Configuration: N-Channel, ideal for low-side switching.
  • Applications: Suitable for power supplies, battery management, and consumer electronics.

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The MOSFET N-Channel 30V 5.8A in the compact SOT-23-3 package is a high-performance transistor designed for low-voltage, high-efficiency applications. With a maximum drain-to-source voltage of 30V and a continuous drain current rating of 5.8A, this device can handle moderate power levels while ensuring minimal energy loss. The transistor is designed to operate efficiently at temperatures up to 1.4W (Ta) of power dissipation, making it suitable for a range of switching and amplification applications. The SOT-23-3 surface-mount package allows for easy integration into compact circuit designs, saving space and enabling high-density layouts. The N-channel configuration means that the device is typically used in low-side switching applications, where it can deliver fast switching performance and reliable operation. This MOSFET is ideal for use in power supplies, battery management systems, and various consumer electronics that require robust, compact, and energy-efficient switching devices.

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