The IGBT Trench Field Stop is a high-performance 1200V 80A 555W module designed for efficient power switching applications. It comes in a through-hole TO-247-3 package, making it ideal for use in high-power circuits where reliable and efficient performance is critical. This Insulated Gate Bipolar Transistor (IGBT) features a trench field stop structure, which enhances its switching speed and efficiency while minimizing power loss. With its high voltage and current handling capabilities, this IGBT is perfect for applications such as motor drives, inverters, and power supplies. The TO-247-3 package allows for easy integration into PCB designs, providing a robust solution for industrial and power electronics.
Bipolar Transistors, Electronic Components, Transistor
FGH40T120SMD-F155
- Voltage Rating: 1200V with a current handling capacity of 80A.
- Power Dissipation: Capable of handling 555W for high-power applications.
- Package: Through-hole TO-247-3, ideal for easy PCB integration.
- Technology: Trench Field Stop design for enhanced efficiency and switching speed.
₹874.00
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